Gate Drive Characteristics and Requirements for Power MOSFETs
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eGaN® FET Drivers and Layout Considerations EFFICIENT POWER CONVERSION DriviNG eGaN® FETs
DriviNG eGaN® FETs When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...
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